Dopants And Defects In Semiconductors Second Edition

Author: Matthew D. McCluskey
Publisher: CRC Press
ISBN: 1351977970
Size: 18.45 MB
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Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ?Materials Today "... well written, with clear, lucid explanations ..." ?Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.

Iii Nitride Semiconductors Electrical Structural And Defects Properties

Author: M.O. Manasreh
Publisher: Elsevier
ISBN: 9780080534442
Size: 65.42 MB
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Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Defects In Semiconductors

Author:
Publisher: Academic Press
ISBN: 0128019409
Size: 21.88 MB
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This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors

Theory Of Defects In Semiconductors

Author: David A. Drabold
Publisher: Springer
ISBN: 9783540822707
Size: 35.15 MB
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This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. The book discusses today's state-of-the-art, as well as tomorrow’s tools: the supercell-pseudopotential method, the GW formalism, Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments and more. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.

Non Stoichiometry In Semiconductors

Author: K.J. Bachmann
Publisher: Elsevier
ISBN: 0444600272
Size: 42.72 MB
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Significant advances have occurred in the theory of non-stoichiometry problems and fundamentally new and wide-ranging applications have been developed, helping to better identify relevant issues. The contributions in this volume bring together the experience of specialists from different disciplines (materials scientists, physicists, chemists and device people) confronted with non-stoichiometry problems. The 40 papers, including 9 invited papers, give an advanced scenario of this wide interdisciplinary area, which is highly important in its diverse aspects of theory, implementation and applications. This work will be of interest not only to universities and laboratories engaged in studies and research in this field, but also to organizations and industrial centres concerned with implementations and applications. The diversity of the topics, as well as the extraordinary tempo in which Non-stoichiometry in Semiconductors has progressed in recent years attest to the permanent vitality of this field of research and development.

Germanium Based Technologies

Author: Cor Claeys
Publisher: Elsevier
ISBN: 9780080474908
Size: 15.56 MB
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Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. State-of-the-art information available for the first time as an all-in-source Extensive reference list making it an indispensable reference book Broad coverage from fundamental aspects up to industrial applications

Hydrogen In Semiconductors

Author: Jacques I. Pankove
Publisher: Academic Press
ISBN: 9780080864310
Size: 78.74 MB
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Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference

Rare Earth And Transition Metal Doping Of Semiconductor Materials

Author: Volkmar Dierolf
Publisher: Woodhead Publishing
ISBN: 008100060X
Size: 68.50 MB
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Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics Details the properties of semiconductors for spintronics

Handbook Of Silicon Semiconductor Metrology

Author: Alain C. Diebold
Publisher: CRC Press
ISBN: 0203904540
Size: 45.50 MB
Format: PDF
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Containing more than 300 equations and nearly 500 drawings, photographs, and micrographs, this reference surveys key areas such as optical measurements and in-line calibration methods. It describes cleanroom-based measurement technology used during the manufacture of silicon integrated circuits and covers model-based, critical dimension, overlay, acoustic film thickness, dopant dose, junction depth, and electrical measurements; particle and defect detection; and flatness following chemical mechanical polishing. Providing examples of well-developed metrology capability, the book focuses on metrology for lithography, transistor, capacitor, and on-chip interconnect process technologies.

Intrinsic Point Defects Impurities And Their Diffusion In Silicon

Author: Peter Pichler
Publisher: Springer Science & Business Media
ISBN: 3709105978
Size: 11.68 MB
Format: PDF
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This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.